We report an electrically conducting 40-pair silicon doped Al0.12Ga0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Omega, which corresponds to bulk resistivity of 0.52 Omega cm, near the maximum measured current of 100 mA. (C) 2016 Elsevier B.V. All rights reserved.