Single phase epsilon-Mn4N and zeta-Mn10N thin films are grown on MgO(001) using molecular beam epitaxy. The films are identified and characterized using reflection high-energy electron diffraction, x-ray diffraction, back scattered electron scanning electron microscopy, atomic/magnetic force microscopy and Rutherford backscattering spectrometry. These films are found to be highly smooth with root-mean-squared roughnesses 3.39 nm and below. The quality of epsilon-Mn4N grown is strongly dependent on substrate temperature during growth. Epitaxial growth of substantial grains composed of the antiferromagnetic eta-phase Mn3N2 side by side with ferrimagnetic epsilon-phase grains is observed when growth temperature is below 480 degrees C. Ising domains isolated within areas roughly 0.5 mu m across are observed in the ferrimagnetic epsilon-phase grains of samples consisting of a mix of q- and epsilon-phase grains. Magnetic domains following semi-continuous paths, which are 0.7-7.2 mu m across, are observed in single phase epsilon-Mn4N. Measurements of the zeta-phase detail the structure and magnetism of the material as high Mn content gamma-type zeta-phase with a regular surface corrugation along the [100]-direction and antiferromagnetic. (C) 2016 Elsevier B.V. All rights reserved.