Dielectric relaxation process of ice-Ih has been investigated by many researchers. Pioneering studies focused on the temperature dependence of the dielectric relaxation time, tau(ice), were reported by Auty in 1952 [Auty, R. P.; Cole, R H. J. Chem. Phys. 1952, 120, 1309] and Johari in 1981 [Johari, G. P.; Whalley, E. J. Chem. Phys. 1981, 7.5, 1333]. However, the temperature dependences of tau(ice) found in these studies are not in agreement. While Auty et al. reported a single Arrhenius temperature dependence of tau(ice) for the entire 207-273 K temperature range, Johari et al. reported changes in the temperature dependence of tau(ice) at 230 and 140 K. In this study, the temperature dependence of tau(ice) is investigated by broadband dielectric spectroscopy for ice prepared by three different procedures. For all investigated ices, a dielectric relaxation process is observed, and tau(ice) decreases with increasing temperature. Temperature dependence of rce with rapid crystallization shows the same properties at temperatures down to 140 K as that reported by Johari et al. On the other hand, tau(ice) obtained by slow crystallization exhibits the same temperature dependence of tau(ice) as those reported by Auty et al. We suggest that the difference between the temperature dependences of tau(ice) found by Auty et al. and Johari et al. can be controlled by preparation conditions. That is, the growth rate of the ice crystal can affect tau(ice) because a slow growth speed of the ice crystal induces a smaller impurity content of ice, giving rise to an Arrhenius temperature dependence of tau(ice).