The thin films of CdZnO were deposited on glass substrates using dc magnetron sputtering technique and investigated after heavy ion-irradiations of 100 MeV Au ions with the fluences ranging from 1 x 10(11) ions/cm(2) to 1 x 10(13) ions/cm(2). The structural, optical and electrical properties of the irradiated and pristine films were studied by glancing angle X-ray diffraction (GAXRD), UV-vis-NIR spectroscopy and Hall effect measurement. The structural characterization using GAXRD pattern shows an enhancement of crystallinity up to the ion fluence of 5 x 10(12) ions/cm(2), and the crystallinity decreases at the highest fluence of 1 x 10(13) ions/cm(2) and these films exhibit hexagonal wurtzite crystal structure (002) with a c-axis orientation. The optical transmittance spectra reveals a red shift and the optical band gap decreases upon ion-irradiation with the minimum band gap at the ion fluence of 5 x 10(12) ions/cm(2). The average transmittance of the thin film of CdZnO increases from 75% to 85% after irradiation (up to 5 x 10(12) ions/cm(2)). The atomic force microscopy image of the films reveals that roughness decreases up to the fluence of 5 x 10(12) ions/cm(2) and increases at higher fluences. The films irradiated with a fluence of 5 x 10(12) ions/cm(2) would show better electrical properties like low resistivity, high carrier concentration and mobility compared to other irradiated films. (C) 2015 Elsevier B.V. All rights reserved.