This study investigated the effect of different annealing conditions on the electrical properties of aluminum-doped ZnO/Au/aluminum-doped ZnO thin films. The thin films were prepared using rf magnetron sputtering (for AZO) and ion sputtering (for Au). They were then annealed in atmospheres of vacuum, nitrogen, and oxygen at temperatures ranging from 100 to 400 degrees C in steps of 100 degrees C for 3 min. Two critical parameters of the multilayer films were the Au layer thickness and annealing conditions (influence of the annealing temperature and atmosphere). High-quality multilayer films (with an 8-nm-thick Au layer) with a resistivity of 6.34 x 10(-5) Omega cm and a maximum optical transmittance of 92.3% were obtained upon annealing the films at 200 degrees C in vacuum. These parameter values indicate that the films are a potential candidate for high-quality electrodes in various displays. (C) 2015 Elsevier B.V. All rights reserved.