The thermal conductivity of various epitaxial grown polycrystalline silicon layers was measured by using the 3-omega-method. Heater widths of 20 mu m, 55 mu m and 80 mu m were structured applying standard photolithography. Experimental values are given, depending on layer thickness, ranging from 5 mu m to 50 mu m, the impurity concentration, the deposition temperature and recrystallization time. The measured values were used to discuss the cross-plane and in-plane thermal conductivity. (C) 2016 Elsevier B.V. All rights reserved.