Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate

Cui FF; Wang C; Li XB; Wang G; Liu KQ; Yang Z; Feng QL; Liang X; Zhang ZY; Liu SZ; Lei ZB; Liu ZH; Xu H; Zhang J

Advanced Materials, Vol.28, No.25, 5019-5024, 2016

DOI10.1002/adma.201600722 Export Citation

Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate

Cui FF, Wang C, Li XB, Wang G, Liu KQ, Yang Z, Feng QL, Liang X, Zhang ZY, Liu SZ, Lei ZB, Liu ZH, Xu H, Zhang J

Anisotropic 2D layered material rhenium disulfi de (ReS2) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium-assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium-tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 degrees C) and sulfur precursors in the temperature range of 460-900 degrees C with high efficiency.