Micro-Raman analysis was carried out on two Cu(In,Ga)Se-2 films to determine the location of the secondary phases, which were suspected of being formed during the selenization process of Cu-In-Ga metallic precursor films. A slope polishing technique using a dimple grinder was applied to physically expand the film thickness by several hundred fold, which allowed high resolution Raman analysis. Various secondary phases including CuxSe, InSe, Se, and MoySe at different depths were identified without need for time-consuming sputter etching, which may adversely affect the film chemistry. With the help of the new sample preparation method for depth analysis of thin film, a precise decision on the location of those secondary phases along the film thickness and better understanding of the reaction mechanism was enabled. (C) 2016 Elsevier B.V. All rights reserved.