BiFeO3 and BiFeO3/NiO thin films have been deposited on Pt/Ti/SiO2/Si substrates by sol-gel method. Compared with bare BiFeO3 thin films, an improvement of memory resistive switching characteristic, such as the dispersion of switching voltages and resistances, has been clearly observed in BiFeO3 thin films using NiO as a buffer layer. Moreover, threshold resistive switching has also been demonstrated in BiFeO3/NiO thin films, but no observation in BiFeO3 thin films. Then, the role of thin NiO layer on memory resistive switching stabilization and threshold resistive switching is discussed. (C) 2016 Elsevier B.V. All rights reserved.