열중착법으로 제조한 PVDF 유기 박막의 전기적 특성에 관한 연구

박수홍; 이덕출

Polymer(Korea), Vol.23, No.1, 66-72, January, 1999

Export Citation

열중착법으로 제조한 PVDF 유기 박막의 전기적 특성에 관한 연구

A Study on the Electrical Properties of PVDF Organic Thin Film Fabricated by Thermal Vapor Deposition Method

박수홍, 이덕출

초록

본 논문의 목적은 열증착법을 이용하여 제조한 PVDF 유기 박막의 비정상적인 유전 특성을 검토하는데 있다. PVDF 유기 박막의 유전 특성은 주파수 10 Hz - 4 MHz, 측정 온도를 20-100℃로 변화시켜 조사하였다. 저주파와 고온 영역에서 비유전율과 유전 손실의 비정상적인 증가는 PVDF 유기 박막이 불순물 캐리어를 포함하고 있기 때문에 나타나는 것이다. 이를 규명하기 위한 전기 전도 특성 평가에서 저전계 영역에서는 오옴의 법칙이 성립하고 고전계 영역에서는 이온성 전도의 일반적인 특성인 In J와 In E가 비례하는 것을 확인하였다. 이 때 이온의 호핑 거리는 온도증가에 따라서 35-62 A로 증가하고 있음을 알 수 있다. 이와 같은 결과는 전도의 주 캐리어가 이온임을 나타내어 주는 것이다. 즉, 이온이 고분자와 전극 계면으로 이동함에 따라 비정상적 유전 분산과 흡수가 발생한다는 것을 알 수 있다.

In this paper, the anomalous dielectric properties of polyvinylidene fluoride (PVDF) organic thin films fabricated by thermal vapor deposition method had been investigated. The dielectric properties of PVDF organic thin film had been studied in the frequency range from 10 Hz to 4 MHz at measuring temperature between 20 and 100 ℃. The anomalous increasing in dielectricconstant and dielectric loss at low frequency and high temperature was described for PVDF organic thin film containing impurity carriers. It was confirmed that in view of electric conductive characteristics the ohm''s law is satisfied in the range of lower electric field and in J was proportional to the applied electric field In E as like the convention al property of ionic conduction in the range of higher electric field. The hopping distance of ions increased from 35 to 62 Å with rising temperature. It was confirmed that main carrier of conductivity was ions. That is, anomalous dielectric despersion and absorption appeared when ionic carriers transferred to polymer-metal interface.

Keywords:dielectric properties;polyvinylidene fluoride;electric conductive;hopping distance

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[1] Tashiro K, "Ferroelectric Polymers," ed. by H.S. Nalwa, p. 63, Dekker, New York (1995)

[2] Kawai H, Jpn. J. Appl. Phys., 8(6), 975 (1969)

[3] Davis GT, McKinney JE, Broadhurst MG, Roth SC, J. Appl. Phys., 49(10), 4998 (1978)

[4] Lovinger AJ, Science, 22, 1115 (1983)

[5] Lee DC, Park SH, Lim EC, Choi CS, K.I.E.E., 45(11), 1573 (1996)

[6] Kang HB, "Electric·Electronic Material," ed. by H.S. Kim, p. 346,Chung-Moon-Kag, Korea (1986)

[7] Park CY, "Electrical Properties Engineering," ed. by K.H. Han, p. 263, Ban-Do Publisher, Korea, 1993 (1993)

[8] Ieda Y, "Electrical Properties and Dielectric Material Theory," ed. by J.I.E.E., p. 125, Japan (1981)

[9] Hayashi K, Jpn. J. Appl. Phys., 21(9), 1379 (1969)

[10] Uemura S, J. Polym. Sci. B: Polym. Phys., 12, 1177 (1974)

[11] Ieda Y, "Dielectric Material Theory," ed. by J.I.E.E., p. 235, Japan (1975)

[12] Yeargan JR, Taylor HL, J. Appl. Phys., 39(12), 5600 (1968)

[13] Hikhu M, Jpn. J. Appl. Phys., 24(8), 988 (1985)

[14] Chon CS, "Discharge and High Voltage Engineering," ed. by K.J. Choi, p. 278, Dong-Myung Publishers, Korea (1995)