Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole-Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole-Frenkel emissions is observed and owing to the formation of intermediate SnSixOy layer. (C) 2016 Elsevier B.V. All rights reserved.