Here we demonstrate the influence of firing temperatures on the electronic properties of Atmospheric Pressure Plasma Liquid Deposition (APPLD) silicon dioxide films due to reformed material composition and its overall impact on surface passivation quality. Experimentally extracted electronic parameters using electrical capacitance-voltage-conductance (C-V-G) measurements on a Metal-Oxide-Semiconductor (MOS) structure reveal that films fired at 810 degrees C show a slightly higher concentration of negative fixed charges (-Q(f)) and interface trap charges (D-it) compared to films fired at 940 degrees C. Such a dependency on the firing temperature can be attributed to variation in the net concentrations of silanol and carbon groups within the films, subsequently influencing the type of passivation mechanism involved. We show that for films fired at 810 and 940 degrees C, the predominant passivation mechanisms are related to field effect induced by excess silanol groups and chemical passivation due to the absence of electrically active carbon related defects, respectively. Additionally, dielectric constant (K) extraction from C-V measurements at 1 kHz returns an almost 2-fold higher K-value for films fired at 810 degrees C (K similar to 21) compared to films fired at 940 degrees C (K similar to 12), due to excess silanol concentration in the former films. (C) 2016 Elsevier B.V. All rights reserved.