To grow the [200] oriented Pt film on the Ti/Si02/Si structure by DC magnetron sputtering, electrical and crystallographic properties of Pt thin films were investigated according to deposition conditions like sputtering gases, pressures and substrate temperatures with post annealing treatments of RT A and furnace annealing. As the result of experiments, Pt(200) films with the preferred orientation degree of more than 90% could be obtained by depositing Pt films under conditions of the mixed gas atmosphere of Ar+O2(20%), the pressure of 20mTorr and the substrate temperature of 500℃ and by performing rapid thermal annealing at 600℃ for 30 sec. Fabricated Pt(200) thin films exhibited low electrical resistivities of 30-40μQ · cm and good thermal stabilities showing no change of resistivity and preferred orientation without microstructural defects and agglomeration after long term annealing in a furnace of 600℃.