A spontaneous patterning technique via parallel vacuum ultraviolet is developed for fabricating large-scale, complex electronic circuits with 1 mu m resolution. The prepared organic thin-film transistors exhibit a low contact resistance of 1.5 k Omega cm, and high mobilities of 0.3 and 1.5 cm(2) V-1 s(-1) in low-operating-voltage devices with channel lengths of 1 and 5 mu m, respectively.