New and effective chemosensor was fabricated using p-nickel oxide (NiO)/n-conducting polyaniline (PANI) based Schottky barrier diode for the detection of hydrazinobenzene chemical. The n-PANI was synthesized through in-situ chemical doping of PANI EB by using calcium hydride as dopant and subjected to elemental analysis, optical, structural and morphological properties. The appearance of a non-linear I-V behavior at the interface of Pt and p-NiO/n-PANI layer confirmed the formation of Schottky junction of the fabricated Pt/p-NiO/n-PANI/n-Si Schottky barrier diode. The electrochemical properties of Pt/p-NiO/n-PANI/n-Si Schottky barrier diode towards the detection of hydrazinobenzene were elucidated by cyclovoltametry (CV) measurements. The sensing results revealed that the Pt/p-NiO/n-PANI/n-Si Schottky barrier diode exhibited a stable, reliable high sensitivity similar to 90.5 mu A mM(-1) cm(-2), good detection limit of similar to 5.11 mu M with correlation coefficient (R) of similar to 0.99417 and short response time (10s). Herein, n-type chemical doping of PANI and the formation of Schottky barrier elicited the sensing parameters such as sensitivity, detection limit and correlation coefficient. (C) 2016 Elsevier Ltd. All rights reserved.