화학공학소재연구정보센터
Journal of the American Chemical Society, Vol.138, No.36, 11505-11508, 2016
High-Conductance Pathways in Ring-Strained Disilanes by Way of Direct sigma-Si-Si to Au Coordination
A highly conducting electronic contact between a strained disilane and Au is demonstrated through scanning tunneling microscope-based single molecule measurements. Conformationally locked cis diastereomers of bis(sulfide)-anchor-equipped 1,2-disilaa-cenaphthenes readily form high-conducting junctions in which the two sulfide anchors bind in a bipodal fashion to one gold electrode, providing enough stability for a stable electrical contact between the Si-Si sigma bond and the other electrode.