Thermally evaporated Sb2S3 and Ag-Sb2S3 thin films were prepared by using Sb2S3 and Ag nanopowders as precursors. The deposited films were annealed at 250 degrees C and 300 degrees C in the air atmosphere and were characterized by using XRD, SEM, AFM, UV-VlSible, FTIR and electrical studies. The deposited film showed amorphous in nature at the annealing temperature less than 250 degrees C whereas the monoclinic structure of Ag3SbS3 is noticed in above 250 degrees C annealing temperatures. AFM studies reveal the morphological change with respect to the annealing temperature. The direct band gap was found to be 2.02 eV, 1.83 eV and 1.74 eV for Sb2S3, AgSbS2, Ag3SbS3 respectively. FTIR spectra showed the stretching vibrational mode of Ag-O, AgSO4 and Sb2O3. The electrical conductivity of Ag3SbS3 film is better (sigma = 1.01 mho cm(-1)) than that of AgSbS2 (sigma = 0.71 mho cm(-1)). The opto-structural and electrical studies revealed that the film Ag3SbS3 is identified as the potential absorber for photovoltaic application. The photosensitivity of the ITO: AgSbS2/CdS and ITO: Ag3SbS3/CdS thin films is found to be about 58% and 61% respectively. (C) 2016 Elsevier B.V. All rights reserved.