Resistance random access memory consisting of ZnO/TiO2/Cu structure is demonstrated on a flexible and transparent PET/ITO substrate. To improve cell to cell uniformity, amorphous TiO2 fabricated by atomic layer deposition is used for resistive switching material with ZnO film as a blocking layer. XRD, SEM and AFM measurements were used to analyze the composition and structure of the ZnO/TiO2 films. XPS spectra and depth profile of the ZnO/TiO2 structure were thoroughly investigated to verify the chemical composition of the films. Resistive switching characteristics were measured and conduction mechanism was analyzed according to above analysis. (C) 2016 Elsevier Ltd. All rights reserved.