We investigated controlling the stoichiometry, and lowering the growth temperature, of YbFe2O4 thin films, which were fabricated at similar to 900 degrees C. To enhance the formation of YbFe2O4 by pulsed laser deposition (PLD) at 700 degrees C, we precisely controlled the oxygen supply to the substrate, by increasing the chamber pressure. A high growth rate also suppressed the revaporization of Fe ions from the film surface. Optimizing these growth conditions yielded single crystalline YbFe2O4 epitaxial films on (111) yttria-stabilized zirconia (YSZ) at 700 degrees C. The YbFe2O4 films deposited at 700 degrees C exhibited the same temperature dependence of resistivity, as those deposited at 850 degrees C. The resistivity of the former was an order of magnitude higher than the latter, as a result of lower Fe revaporization. (C) 2016 Elsevier B.V. All rights reserved.