Selective-area growth, which can be an alternative to ion implantation, is an important technology for processing diamond power devices. In conventional chemical vapor deposition (CVD), a portion of the metal mask (non-growing region) peels off and is unintentionally incorporated into the film; therefore, creating high-quality fine patterns is a great challenge. In this study, we developed a technique to fabricate fine structures on a submicron scale by employing hot-filament (HF) CVD. The mask pattern was kept intact during growth, and submicron-scale selective-area growth was realized. As a result, contamination-free metallic p(+) diamond films possessing a smooth surface morphology were successfully selectively grown. (C) 2016 Elsevier B.V. All rights reserved.