Iron oxide grown by low-temperature atomic layer deposition

Seenivasan Selvaraj; Hee Moon; Ju-Young Yun; Do-Heyoung Kim

Korean Journal of Chemical Engineering, Vol.33, No.12, 3516-3522, December, 2016

DOI10.1007/s11814-016-0319-8 Export Citation

Iron oxide grown by low-temperature atomic layer deposition

Seenivasan Selvaraj, Hee Moon , Ju-Young Yun¹, and Do-Heyoung Kim^†

School of Chemical Engineering, Chonnam National University, 300 Youngbong-dong, Gwangju 61186, Korea
¹Center for Vacuum, Korea Research Institute of Standards and Science, 267 Gajeong-ro, Daejeon 34113, Korea

E-mail:

Atomic layer deposition (ALD) is a promising technology for fabricating conformal thin films of atomlevel thickness with chemical composition control over a variety of structures. This paper demonstrates the ALD of iron oxide thin films using a novel iron precursor, namely, bis[bis(trimethylsilyl)amide]iron [Fe(btmsa)2] and hydrogen peroxide as an oxygen source. The growth characteristics of iron oxide were investigated by varying the deposition temperatures from 100 to 225 °C, such that the ALD growth mode was observed at 150 to 175 °C with an average growth rate of 0.035±0.005 nm/cycle. The films deposited in ALD mode exhibited highly linear film thicknesses with the number of cycles and excellent conformality over high-aspect-ratio trenches. In addition, the deposited films were extremely pure and revealed a hematite phase without any subsequent heat treatment, even if the films were deposited at low temperatures.

Keywords:Atomic Layer Deposition;Precursor;Bis[bis(trimethylsilyl)amide]iron;Hematite;Thin Film;Iron Oxide

[References]

Tamirat AG, Rick J, Dubale AA, Su WN, Hwang BJ, Nanoscale Horiz., 1(4), 243 (2016)
Tartaj P, Morales MP, Gonzalez-Carreno T, Veintemillas-Verdaguer S, Serna CJ, Adv. Mater., 23(44), 5243 (2011)
Hisatomi T, Dotan H, Stefik M, Sivula K, Rothschild A, Gratzel M, Mathews N, Adv. Mater., 24(20), 2699 (2012)
Adegoke HI, AmooAdekola F, Fatoki OS, Ximba BJ, Korean J. Chem. Eng., 31(1), 142 (2014)
Lu XH, Zeng YX, Yu MH, Zhai T, Liang CL, Xie SL, Balogun MS, Tong YX, Adv. Mater., 26(19), 3148 (2014)
Siroky K, Jiresova J, Hudec L, Thin Solid Films, 245(1-2), 211 (1994)
Huo L, Li Q, Zhao H, Yu L, Gao S, Zhao J, Sens. Actuators B-Chem., 107(2), 915 (2005)
Neri G, Bonavita A, Galvagno S, Li YX, Galatsis K, Wlodarski W, IEEE Sens. J., 3, 195 (2003)
Duret A, Gratzel M, J. Phys. Chem. B, 109(36), 17184 (2005)
Cornuz M, Gratzel M, Sivula K, Chem. Vap. Deposition, 16(10-12), 291 (2010)
Carraro G, Gasparotto A, Maccato C, Bontempi E, Barreca D, Chem. Vap. Deposition, 21(10-12), 291 (2005)
Lin YJ, Xu Y, Mayer MT, Simpson ZI, McMahon G, Zhou S, Wang DW, J. Am. Chem. Soc., 134(12), 5508 (2012)
Riha SC, Klahr BM, Tyo EC, Seifert S, Vajda S, Pellin MJ, Hamann TW, Martinson ABF, ACS Nano., 7(3), 2396 (2013)
Zandi O, Klahr BM, Hamann TW, Energy Environ. Sci., 6(2), 634 (2013)
George SM, Chem. Rev., 110(1), 111 (2010)
Lim SH, Seo SW, Lee H, Chae H, Cho SM, Korean J. Chem. Eng., 33(6), 1971 (2016)
Knez M, Niesch K, Niinisto L, Adv. Mater., 19(21), 3425 (2007)
Miikkulainen V, Leskela M, Ritala M, Puurunen RL, J. Appl. Phys., 113, 021301 (2013)
Scheffe JR, Frances A, King DM, Liang XH, Branch BA, Cavanagh AS, George SM, Weimer AW, Thin Solid Films, 517(6), 1874 (2009)
Martinson ABF, Devries MJ, Libera JA, Christensen ST, Hupp JT, Pellin MJ, Elam JW, J. Phys. Chem. C, 115(10), 4333 (2011)
Rooth M, Johansson A, Kukli K, Aarik J, Boman M, Harsta A, Chem. Vap. Deposition, 14(3-4), 67 (2008)
Riha SC, Racowski JM, Lanci MP, Klug JA, Hock AS, Martinson ABF, Langmuir, 29(10), 3439 (2013)
Klug JA, Becker NG, Riha SC, Martinson ABF, J. Mater. Chem. A, 1, 11607 (2013)
Lim BS, Rahtu A, Gordon RG, Nat. Mater., 2(11), 749 (2003)
Avila JR, Kim DW, Rimoldi M, Farha OK, ACS Appl. Mater. Interfaces, 7(30), 16138 (2015)
Lie M, Fjellvag H, Kjekshus A, Thin Solid Films, 488(1-2), 74 (2005)
Bachmann J, Jing J, Knez M, Barth S, Shen H, Mathur S, Gosele U, Nielsch K, J. Am. Chem. Soc., 129(31), 9554 (2007)
de Ridder M, van de Ven PC, van Welzenis RG, Brongersma HH, Helfensteyn S, Creemers C, Van Der Voort P, Baltes M, Mathieu M, Vansant EF, J. Phys. Chem. B, 106(51), 13146 (2002)
Andersen RA, Faegri K, Green JC, Haaland A, Lappert MF, Leung WP, Rypdal K, Inorg. Chem., 27(10), 1782 (1988)
Libera JA, Hryn JN, Elam JW, Chem. Mater., 23(8), 2150 (2011)
Hausmann DM, Gordon RG, J. Cryst. Growth, 249(1-2), 251 (2003)
Sambandam B, Surenjan A, Philip L, Pradeep T, ACS Sustainable Chem. Eng., 3(7), 1321 (2015)
Karakalos S, Siokou A, Ladas S, Appl. Surf. Sci., 255(21), 8941 (2009)
Kim DH, Kim JJ, Park JW, Kim JJ, J. Electrochem. Soc., 143(9), L188 (1999)
McIntyre NS, Zetaruk DG, Anal. Chem., 49(11), 1521 (1977)
Grosvenor AP, Kobe BA, Biesinger MC, McIntyre NS, Surf. Interface Anal., 36(12), 1564 (2004)

[Referenced By]

[Related Articles]

[1] Tamirat AG, Rick J, Dubale AA, Su WN, Hwang BJ, Nanoscale Horiz., 1(4), 243 (2016)

[2] Tartaj P, Morales MP, Gonzalez-Carreno T, Veintemillas-Verdaguer S, Serna CJ, Adv. Mater., 23(44), 5243 (2011)

[3] Hisatomi T, Dotan H, Stefik M, Sivula K, Rothschild A, Gratzel M, Mathews N, Adv. Mater., 24(20), 2699 (2012)

[4] Adegoke HI, AmooAdekola F, Fatoki OS, Ximba BJ, Korean J. Chem. Eng., 31(1), 142 (2014)

[5] Lu XH, Zeng YX, Yu MH, Zhai T, Liang CL, Xie SL, Balogun MS, Tong YX, Adv. Mater., 26(19), 3148 (2014)

[6] Siroky K, Jiresova J, Hudec L, Thin Solid Films, 245(1-2), 211 (1994)

[7] Huo L, Li Q, Zhao H, Yu L, Gao S, Zhao J, Sens. Actuators B-Chem., 107(2), 915 (2005)

[8] Neri G, Bonavita A, Galvagno S, Li YX, Galatsis K, Wlodarski W, IEEE Sens. J., 3, 195 (2003)

[9] Duret A, Gratzel M, J. Phys. Chem. B, 109(36), 17184 (2005)

[10] Cornuz M, Gratzel M, Sivula K, Chem. Vap. Deposition, 16(10-12), 291 (2010)

[11] Carraro G, Gasparotto A, Maccato C, Bontempi E, Barreca D, Chem. Vap. Deposition, 21(10-12), 291 (2005)

[12] Lin YJ, Xu Y, Mayer MT, Simpson ZI, McMahon G, Zhou S, Wang DW, J. Am. Chem. Soc., 134(12), 5508 (2012)

[13] Riha SC, Klahr BM, Tyo EC, Seifert S, Vajda S, Pellin MJ, Hamann TW, Martinson ABF, ACS Nano., 7(3), 2396 (2013)

[14] Zandi O, Klahr BM, Hamann TW, Energy Environ. Sci., 6(2), 634 (2013)

[15] George SM, Chem. Rev., 110(1), 111 (2010)

[16] Lim SH, Seo SW, Lee H, Chae H, Cho SM, Korean J. Chem. Eng., 33(6), 1971 (2016)

[17] Knez M, Niesch K, Niinisto L, Adv. Mater., 19(21), 3425 (2007)

[18] Miikkulainen V, Leskela M, Ritala M, Puurunen RL, J. Appl. Phys., 113, 021301 (2013)

[19] Scheffe JR, Frances A, King DM, Liang XH, Branch BA, Cavanagh AS, George SM, Weimer AW, Thin Solid Films, 517(6), 1874 (2009)

[20] Martinson ABF, Devries MJ, Libera JA, Christensen ST, Hupp JT, Pellin MJ, Elam JW, J. Phys. Chem. C, 115(10), 4333 (2011)

[21] Rooth M, Johansson A, Kukli K, Aarik J, Boman M, Harsta A, Chem. Vap. Deposition, 14(3-4), 67 (2008)

[22] Riha SC, Racowski JM, Lanci MP, Klug JA, Hock AS, Martinson ABF, Langmuir, 29(10), 3439 (2013)

[23] Klug JA, Becker NG, Riha SC, Martinson ABF, J. Mater. Chem. A, 1, 11607 (2013)

[24] Lim BS, Rahtu A, Gordon RG, Nat. Mater., 2(11), 749 (2003)

[25] Avila JR, Kim DW, Rimoldi M, Farha OK, ACS Appl. Mater. Interfaces, 7(30), 16138 (2015)

[26] Lie M, Fjellvag H, Kjekshus A, Thin Solid Films, 488(1-2), 74 (2005)

[27] Bachmann J, Jing J, Knez M, Barth S, Shen H, Mathur S, Gosele U, Nielsch K, J. Am. Chem. Soc., 129(31), 9554 (2007)

[28] de Ridder M, van de Ven PC, van Welzenis RG, Brongersma HH, Helfensteyn S, Creemers C, Van Der Voort P, Baltes M, Mathieu M, Vansant EF, J. Phys. Chem. B, 106(51), 13146 (2002)

[29] Andersen RA, Faegri K, Green JC, Haaland A, Lappert MF, Leung WP, Rypdal K, Inorg. Chem., 27(10), 1782 (1988)

[30] Libera JA, Hryn JN, Elam JW, Chem. Mater., 23(8), 2150 (2011)

[31] Hausmann DM, Gordon RG, J. Cryst. Growth, 249(1-2), 251 (2003)

[32] Sambandam B, Surenjan A, Philip L, Pradeep T, ACS Sustainable Chem. Eng., 3(7), 1321 (2015)

[33] Karakalos S, Siokou A, Ladas S, Appl. Surf. Sci., 255(21), 8941 (2009)

[34] Kim DH, Kim JJ, Park JW, Kim JJ, J. Electrochem. Soc., 143(9), L188 (1999)

[35] McIntyre NS, Zetaruk DG, Anal. Chem., 49(11), 1521 (1977)

[36] Grosvenor AP, Kobe BA, Biesinger MC, McIntyre NS, Surf. Interface Anal., 36(12), 1564 (2004)