A novel procedure for the growth of SiO2 nanowires (SiO(2)NWs) directly from polycrystalline copper foils is reported. The single-step synthesis procedure consists of a thermal treatment at 900 degrees C without the need for additional catalysts. As a result, nanowires with an average diameter of 100 nm are synthesized. A systematic study undertaken at different stages of the SiO(2)NWs growth confirmed the generation of nucleation centers on the Cu surface, as well as revealed the existence of an intermediate gaseous SiO species at the synthesis temperature. On the basis of these evidences, the vapor-liquid-solid (VLS) route has been proposed as the mechanism responsible for the growth. (C) 2016 Elsevier B.V. All rights reserved.