Comment on "Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt" by T. Abe et al. [J. Cryst. Growth 434 (2016) 128-137] and on "Observations of secondary defects and vacancies in CZ silicon crystals detached from melt using four different types of characterization technique" by T. Abe et al. [J. Cryst. Growth 436 (2016) 23-33] Discussion