Ba2TiSi2O8 (BTS) crystals were successfully grown by the Czochralski method. The raw material ratio was optimized according to the effective segregation coefficient k(eff) of different components in the BTS crystal. The thermal properties of the BTS crystal were systematically studied at elevated temperature, including thermal expansion, specific heat, thermal diffusivity and thermal conductivity. The variations of the thermal expansion coefficients alpha(33) and alpha(11) in the temperature range of 25-185 degrees C were small, whereas those in the temperature range of 185-1000 degrees C were 17.14 x 10(-6)/degrees C and 4.73 x 10(-6)/degrees C, respectively. A strong anisotropic characteristic in the thermal expansion ratio is associated with the lamellar structure of the BTS crystal. The thermal conductivity increased slowly as the temperature rises. The piezoelectric strain constant d(33) of the BTS crystal was determined to be 4.5 pC/N at room temperature using a quasi-static d(33) meter. The electrical resistivity of the BTS crystal was investigated at temperatures up to 900 degrees C, the resistivity rho(gamma), of the BTS Z-cut sample was 2.06 x 10(9) Omega cm at 800 degrees C, which is three orders of magnitude higher than that of a Ca3TaGa3Si2O14 (langasite-type crystal) X-cut sample (7.15 x 10(6) Omega cm) at the same temperature. Thermal and electrical properties have shown that BTS crystal is a potential alternative material for the high temperature piezoelectric sensors. (C) 2016 Elsevier B.V. All rights reserved.