ZrB2 films were deposited on 900 degrees C-preheated or non-preheated GaN(0001) surfaces by direct current magnetron sputtering from a compound target. Analytical transmission electron microscopy and scanning transmission electron microscopy with energy dispersive X-ray spectroscopy and electron energy loss spectroscopy revealed a 0001 fiber textured ZrB2 film growth following the formation of a similar to 2 nm thick amorphous BN layer onto the GaN(0001) at a substrate temperature of 900 degrees C. The amorphous BN layer remains when the substrate temperature is lowered to 500 degrees C or when the preheating step is removed from the process and results in the growth of polycrystalline ZrB2 films. The ZrB2 growth phenomena on GaN(0001) is compared to on 4H-SiC(0001), Si(111), and Al2O3(0001) substrates, which yield epitaxial film growth. The decomposition of the GaN surface during vacuum processing during BN interfacial layer formation is found to impede epitaxial growth of ZrB2. (C) 2016 Elsevier B.V. All rights reserved.