This work attempts to obtain Dy3+-doped SiO2-Gd2O3 by sol-gel process, with a molar ratio of 70Si(4+)-30Gd(3+) and Dy3+ concentrations of 0.1, 0.3, 0.5, and 1 mol%. Heat treatment at temperatures of 1000 degrees C, 1100 degrees C, 1200 degrees C, and 1300 degrees C have been performed. From XRD, the Gd2O3 cubic phase was observed at 1000 degrees C and 1100 degrees C, at 1200 degrees C also were observed Gd2O3 monoclinic phase, predominant at 1300 degrees C. The bandgap values vary between 4.4 and 5.3 eV, showing dependence on the crystalline phase. Under UV excitation, emission spectra show bands assigned to the Dy3+ transitions: F-4(9/2) -> H-6(15/2) (484 nm), F-4(9/2) -> H-6(13/2) (572 nm), and F-4(9/2) -> H-6(11/2) (668 nm). The excitation at 275 nm has shown more effective. The ratio between the most intense emission bands (yellow/blue) show values around 0.84 and 1.63. CIE chromaticity diagrams show color coordinates at blue, yellow, and white regions, as a function of Dy3+ concentration and heat treatment. The lifetime values of excited state F-4(9/2) were around 0.20 and 0.69 ms. The morphology of particles changed from spherical to coral-like shape as a function of heat treatment are observed. The sol-gel process showed to be an interesting route to obtain Dy3+-doped binary system materials.