CeO2 films were prepared at deposition temperature ranged from 947 to 1096 K (corresponding laser power was from 52 to 185 W) on (100) LaAlO3 single crystal substrate by laser chemical vapor deposition. At deposition temperature of 1027-1096 K (laser power was from 115 to 185 W), highly (100)-oriented CeO2 films with wedge-caped columnar grains were prepared, whose epitaxial growth relationship was CeO2 [100]//LAO [100] (CeO2 [010]//LAO [011]). Their full width at half maximum of the omega-scan on the (200) reflection and that of the phi-scan on the (220) reflection were 0.8 degrees-1.8 degrees and 0.7 degrees-1.2 degrees, respectively. The highest deposition rate at which CeO2 film with pure (100) preferred orientation could be obtained was 30 mu m h(-1).