Theoretical model and numerical analysis of charge accumulation within a single GaSb quantum dots layer embedded in GaAs-based Schottky diode is performed. We hereby give an analytical calculation of the capacitance-voltage (C-V) characteristic of GaAs-based Schottky barrier structure incorporating GaSb self-assembled quantum dots layer. The Schottky barrier is derived in different bias voltage region based on solving analytically Poisson's equation, including the effects of the dots size dispersion and the Fermi statistics of the holes in the quantum dots. The numerical simulation of capacitance-voltage curves exhibits a plateau that is caused by the high carrier concentration and the saturation of the quantum dots levels upon the applied voltage. These results are in good agreement with experiments done by Hwang et al. (C) 2016 Elsevier B.V. All rights reserved.