A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z(2)-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, low leakage and an adjustable triggering voltage (V-ON). The Z(2)-FET operation relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained with the most advanced FDSOI node. (C) 2016 Elsevier Ltd. All rights reserved.