Low temperature chemical vapor deposition of ZnO thin films was demonstrated using beta-diketonate complexes [Bis-2,4octanedionato zinc: Zn(OD)(2)] and nonequilibrium N-2/O-2 plasma generated near atmospheric pressure. ZnO films grown at the substrate temperature of 200 degrees C and at the O-2 concentration in the N-2/O-2 mixture gas (02%) of 0.2,3.8 and 20% exhibited excellent (0001) preferred orientation on glass substrates, high transmittance of above 85% in the visible region and smooth surface structure with the continuous columnar grains. Electrical measurement revealed that our ZnO films were highly resistive with the specific resistivity exceeding 10(6) Omega cm at room temperature, which is not easily obtained by the conventional high-vacuum processes without intentional acceptor doping. Thermally stimulated current measurement detected two peaks from highly resistive ZnO film grown at the O-2% of 0.2%, which correspond to the carrier emission from deep trap levels with the activation energies of 170 and 610 meV. The former was assigned as zinc vacancy (V-Zn) or nitrogen substituting oxygen site (N-o), and the latter was assigned as V-Zn or oxygen interstitial (O-i). The carrier compensation by these deep acceptor levels seems to be the origin of high resistivity. (C) 2016 Elsevier B.V. All rights reserved.