Indium gallium zinc oxide (InGaZnO or IGZO) has attracted much attention in recent years for flexible and transparent electronics, because of its superior electric properties, optical transparency and low processing temperature. In this work, Schottky diodes with a structure of Pd/IGZO (100 nm)/Ti/Au were fabricated by radio frequency magnetron sputtering at room temperature without any thermal treatment. The relationship between different IGZO deposition parameters and the forward and reverse current-voltage characteristics of the diodes was systematically studied. We have experimentally revealed that an increase in the oxygen partial pressure during the sputtering process can effectively improve the barrier height of these diodes. However, either high oxygen partial pressure or high sputtering power leads to a deterioration of ideality factor and a decreased rectification ratio. By using relatively low sputtering power (<= 70 W) and low oxygen content of sputtering atmosphere (similar to 2.5%), high-performance diodes have been achieved with high rectification ratio, low ideality factor, and high barrier height of 1.3 x 10(5),1.14, and 0.73 eV, respectively. All diodes with IGZO layer sputtered in oxygen-argon atmosphere show a high reversed breakdown voltage similar to-6 V. (C) 2016 Elsevier B.V. All rights reserved.