The influence of temperature on the energy storage behavior of relaxor-ferroelectric epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) thin film capacitors fabricated using pulsed laser deposition was evaluated using cyclic current-voltage measurements from 25 degrees C to 225 degrees C in order to elucidate ferroelectric and dielectric contributions across the Curie temperature (T-c). In the film thickness range of 125 nm to 500 nm, it has been found that the leakage current through the capacitors increases monotonically with increasing temperature and the effect is more prominent at smaller film thickness, primarily due to a more efficient movement of ferroelectric domains. While these effects prevent thinner PLZT films from maintaining adequate energy storage efficiencies at temperatures above similar to 100 degrees C, thicker films show promising energy storage properties in a wide temperature range. Specifically, the 500 nm thick PLZT film capacitors have a nearly constant energy storage efficiency above similar to 70% in the temperature range of 25 degrees C to 175 degrees C, with a peak efficiency of 78% at 175 degrees C due to the large dielectric constant exceeding similar to 2000 as the temperature approaches the PLZT T-c of 200 degrees C. By quantifying the three contributions of the electric conductivity, dielectric capacitance, and relaxor-ferroelectric domain switching polarization to temperature dependent energy storage properties of relaxor-ferroelectric capacitors, this study reveals that the dielectric contribution dominates in the PLZT capacitors with smaller thickness, while even contributions from all three components are present in films of larger thickness. These results suggest that the PLZT relaxor-ferroelectric thin film capacitors are promising for energy storage applications and further improvement of performance may be achieved by optimization of the film/electrode interface. (C) 2016 Elsevier B.V. All rights reserved.