Bipolar resistance switching characteristics of Ag/ZnO:Li/SnO2:F device on glass

Kafadaryan Y; Igityan A; Aghamalyan N; Petrosyan S; Gambaryan I; Vardanyan V; Semerjian H; Hovsepyan R; Badalyan G

Thin Solid Films, Vol.616, 815-819, 2016

DOI10.1016/j.tsf.2016.09.043 Export Citation

Bipolar resistance switching characteristics of Ag/ZnO:Li/SnO2:F device on glass

Kafadaryan Y, Igityan A, Aghamalyan N, Petrosyan S, Gambaryan I, Vardanyan V, Semerjian H, Hovsepyan R, Badalyan G

The electrically induced resistance changes in lithium-doped zinc oxide (ZnO:Li) film sandwiched between metal electrodes (Ag and fluorine doped SnO2 (FTO)) are analyzed by electrical transport measurements. The bipolar resistance switching and inversed bipolar resistance switching with respect to voltage polarity are observed and characterized for Ag/ZnO:Li/FTO structure. (C) 2016 Elsevier B.V. All rights reserved.

Keywords:Li-doped ZnO film;Thermal annealing;Bipolar resistance switching