Te-Doped Black Phosphorus Field-Effect Transistors

Yang BC; Wan BS; Zhou QH; Wang Y; Hu WT; Lv WM; Chen Q; Zeng ZM; Wen FS; Xiang JY; Yuan SJ; Wang JL; Zhang BS; Wang WH; Zhang JY; Xu B; Zhao ZS; Tian YJ; Liu ZY

Advanced Materials, Vol.28, No.42, 9408-9408, 2016

DOI10.1002/adma.201603723 Export Citation

Te-Doped Black Phosphorus Field-Effect Transistors

Yang BC, Wan BS, Zhou QH, Wang Y, Hu WT, Lv WM, Chen Q, Zeng ZM, Wen FS, Xiang JY, Yuan SJ, Wang JL, Zhang BS, Wang WH, Zhang JY, Xu B, Zhao ZS, Tian YJ, Liu ZY

Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented. This provides a facile route for achieving air-stable black-phosphorus devices.