We examined 1) the photocurrent from Cs3Sb photocathode as a function of anode voltage below 200 V,2) the relationship between the quantum efficiency of photoemission and the conditions for fabrication by the sandwich method, 3) recovery of the photoemission by additional Cs deposition, and 4) the effects of surface protection of Cs3Sb photocathodes by W0(3) and Cr(2)0(3) films in the passive state. The photocurrent had a maximum at approximately 68V except when we increased the anode voltage extraordinarily slowly. Cs3Sb photocathodes were fabricated by increasing the temperature of sandwiched layers of Sb, Cs and Sb deposited on the fine tips of eight cathodes at less than 12 degrees C. Cs3Sb photocathodes having higher quantum efficiency were fabricated by smoothly increasing the temperature of the layers quickly after we deposited the second Sb layer. The photocurrent from the Cs3Sb photocathodes was significantly higher when Cs was deposited at temperatures of 50-70 degrees C. Deposition of a one-to three-atomic-layer W or Cr film extended the photoemission lifetime after the layers were oxidized to W0(3) or Cr(2)0(3) in the passive state due to oxidation. The W0(3) or Cr(2)0(3) in the passive state provided more surface protection as their thickness increased. (C) 2016 Published by Elsevier B.V.