The tungsten diselenide (WSe2) films with different orientation present unique properties suitable for specific applications, such as WSe2 with a C-axis perpendicular to substrate for optoelectronics and WSe2 with a C-axis // substrate for electrocatalysts. Orientation control of WSe2 is essential for realizing the practical applications. In this letter, a WSe2 film has been prepared via rapid selenization of a magnetron-sputtered tungsten (W) film. The influence of the magnetron-sputtered W film on WSe2 film growth was studied systematically. Scanning electron microscopy, X-ray diffractometry and high-resolution transmission electron microscopy were used to evaluate the morphology, microstructure and phase composition of the W and WSe2 films. The substrate temperature has a significant effect on the W film phase composition, but little effect on the WSe2 film orientation. The WSe2 orientation can be controlled by changing the W film microstructure. A dense W film that is deposited at low pressure is conducive to the formation of WSe2 with a C-axis. substrate, whereas a porous W film deposited at high pressure favors the formation of WSe2 with a C-axis // substrate. A growth model for the WSe2 film with different texture has been proposed based on the experimental results. The direction of selenium (Se) vapor diffusion differs at the top and side surfaces. This is a key factor for the preparation of anisotropic WSe2 films. Highly oriented WSe2 films with a C-axis perpendicular to substrate grow from the dense W film deposited at low pressure because Se vapor can only diffuse into the W film from the top surface where it is converted into selenide. Highly oriented WSe2 with a C-axis // substrate can be achieved for the porous W film that is deposited at high pressure because the nanopores provide a fast transmission tunnel for Se vapor diffusion. These findings will contribute to the controlled fabrication of WSe2 film and provide a theoretical basis for its application. (C) 2016 Elsevier B.V. All rights reserved.