We have deposited films of Bi-Te system by atmospheric pressure MOVPE on (0001) Al2O3 substrates with thin ZnTe or thick GaN buffer layers at different temperatures and Te/Bi ratio in the vapor phase. As-grown films were studied by X-ray diffractometry, SEM microscopy and Raman spectroscopy. To determine the elemental composition of the films, an energy dispersive spectrometer was used. Single-phase films of Bi2Te3, Bi4Te5, BiTe, Bi10Te9, Bi4Te3, Bi3Te2 have been grown and growth parameter ranges for obtaining different phases were defined. It was found that under the same growth condition different phases of the Bi-Te system realize depending on the film's thickness. Thus, when growing of Bi2Te3 films by MOCVD method the careful control of the phase composition is required.