Vertical mobilities of poly-3-hexythiophene (P3HT) thin films annealed with various temperatures were estimated by using charge carrier extraction by linearly increasing voltage (CELIV) method, and were compared with those estimated from a conventional space-charge limited current (SCLC) method. Both methods revealed that the mobilities were improved with increasing annealing temperature because of enhanced crystallinity of the P3HT film. In high annealing temperature more than 150 degrees C, SCLC method could not be applicable due to deviation from theoretical analysis; in contrast, CELIV method was valid for all annealing conditions.