Sn-Doped In2O3 나노잉크를 위한 나노로드의 복합화에 따른 용액기반 투명 전도성 산화물의 저온성능

배주원; 구본율; 이태근; 안효진; Ju-Won Bae; Bon-Ryul Koo; Tae-Kun Lee; Hyo-Jin Ahn

Korean Journal of Materials Research, Vol.27, No.3, 149-154, March, 2017

DOI10.3740/MRSK.2017.27.3.149 Export Citation

Sn-Doped In2O3 나노잉크를 위한 나노로드의 복합화에 따른 용액기반 투명 전도성 산화물의 저온성능

Low-Temperature Performance of Solution-Based Transparent Conducting Oxides Depending on Nanorod Composite for Sn-Doped In2O3 Nanoinks

배주원¹, 구본율², 이태근 ^{1, †}, 안효진 ^{1, 2, †}

¹서울과학기술대학교 신소재공학과
²서울과학기술대학교 의공학-바이오소재 융합 협동과정 신소재공학프로그램

Ju-Won Bae¹, Bon-Ryul Koo², Tae-Kun Lee^{1, †}, and Hyo-Jin Ahn^{1, 2, †}

¹Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
²Program of Materials Science & Engineering, Convergence Institute of Biomedical Engineering and Biomaterials, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea

E-mail:,

Transparent conducting oxides (TCOs) were fabricated using solution-based ITO (Sn-doped In2O3) nanoinks with nanorods at an annealing temperature of 200 °C. In order to optimize their transparent conducting performance, ITO nanoinks were composed of ITO nanoparticles alone and the weight ratios of the nanorods to nanoparticles in the ITO nanoinks were adjusted to 0.1, 0.2, and 0.5. As a result, compared to the other TCOs, the ITO TCOs formed by the ITO nanoinks with weight ratio of 0.1 were found to exhibit outstanding transparent conducting performance in terms of sheet resistance (~102.3 Ω/square) and optical transmittance (~80.2%) at 550 nm; these excellent properties are due to the enhanced Hall mobility induced by the interconnection of the composite nanorods with the (440) planes of the short lattice distance in the TCOs, in which the presence of the nanorods can serve as a conducting pathway for electrons. Therefore, this resulting material can be proposed as a potential candidate for solution-based TCOs for use in optoelectronic devices requiring large-scale and low-cost processes.

Keywords:solution-based transparent conducting oxides;Sn-doped In2O3;nanoinks;nanorods;low annealing temperature

[References]

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Jeong JA, Lee J, Kim H, Kim HK, Na SI, Sol. Energy Mater. Sol. Cells, 94(10), 1840 (2010)
Ameera N, Shuhaimi A, Surani N, Rusop M, Hakim M, Mamat MH, Mansor M, Sobri M, Ganesh V, Yusuf Y, Ceram. Int., 41, 913 (2015)
Koo BR, Ahn HJ, J. Nanosci. Nanotechnol., 14, 9632 (2014)
Koo BR, Ahn HJ, Korean J. Mater. Res., 24(3), 145 (2014)
An HR, Oh ST, Kim CY, Baek SH, Park IK, Ahn HJ, J. Alloy. Compd., 615, 728 (2014)
Kim JM, Koo BR, Ahn HJ, Lee TK, Korean J. Mater. Res., 25(3), 125 (2015)
Heo KC, Sohn Y, Gwag JS, Ceram. Int., 41, 617 (2015)
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Manivannan P, Subrahmanyam A, J. Phys. D-Appl. Phys., 26, 1510 (1993)
Pasquarelli RM, Ginley DS, O’Hayre R, Chem. Soc. Rev., 40, 5406 (2011)
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Kim SJ, Yoon S, Kim HJ, Jpn. J. Appl. Phys., 53, 02BA02 (2014)
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Fang M, Aristov A, Rao KV, Kabashin AV, Belova L, RSC Adv., 3, 19501 (2013)
Koo BR, Ahn HJ, Ceram. Int., 42, 509 (2016)
Okuya M, Ito N, Shiozaki K, Thin Solid Films, 515(24), 8656 (2007)
Sawada M, Higuchi M, Thin Solid Films, 317(1-2), 157 (1998)
Higuchi M, Sawada M, Kuronuma Y, J. Electrochem. Soc., 140, 1773 (1993)
Kazmerski LL, Ireland PJ, Sheldon P, J. Vac. Sci. Technol., 17, 1061 (1980)
Koo BR, Ahn HJ, Appl. Phys. Express, 7, 075002 (2014)
Xu Q, Song T, Cui W, Liu Y, Xu W, Lee ST, Sun B, ACS Appl. Mater. Interfaces, 7, 3272 (2015)
Bae JW, Koo BR, An HR, Ahn HJ, Ceram. Int., 41, 14668 (2015)

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[1] van Doorn AR, Jongerius MJ, Phys. Rev., C, 68, 155410 (2003)

[2] Jeong JA, Lee J, Kim H, Kim HK, Na SI, Sol. Energy Mater. Sol. Cells, 94(10), 1840 (2010)

[3] Ameera N, Shuhaimi A, Surani N, Rusop M, Hakim M, Mamat MH, Mansor M, Sobri M, Ganesh V, Yusuf Y, Ceram. Int., 41, 913 (2015)

[4] Koo BR, Ahn HJ, J. Nanosci. Nanotechnol., 14, 9632 (2014)

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[6] An HR, Oh ST, Kim CY, Baek SH, Park IK, Ahn HJ, J. Alloy. Compd., 615, 728 (2014)

[7] Kim JM, Koo BR, Ahn HJ, Lee TK, Korean J. Mater. Res., 25(3), 125 (2015)

[8] Heo KC, Sohn Y, Gwag JS, Ceram. Int., 41, 617 (2015)

[9] Dattoli EN, Lu W, MRS Bulletin, 36, 782 (2011)

[10] Song PK, Shigesato Y, Kamei M, Yasui I, Jpn. J. Appl. Phys., 38, 2921 (1999)

[11] Manivannan P, Subrahmanyam A, J. Phys. D-Appl. Phys., 26, 1510 (1993)

[12] Pasquarelli RM, Ginley DS, O’Hayre R, Chem. Soc. Rev., 40, 5406 (2011)

[13] Chen ZX, Li WC, Li R, Zhang YF, Xu GQ, Cheng HS, Langmuir, 29(45), 13836 (2013)

[14] Kim SJ, Yoon S, Kim HJ, Jpn. J. Appl. Phys., 53, 02BA02 (2014)

[15] Kesim MT, Durucan C, Thin Solid Films, 545, 56 (2013)

[16] Fang M, Aristov A, Rao KV, Kabashin AV, Belova L, RSC Adv., 3, 19501 (2013)

[17] Koo BR, Ahn HJ, Ceram. Int., 42, 509 (2016)

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[21] Kazmerski LL, Ireland PJ, Sheldon P, J. Vac. Sci. Technol., 17, 1061 (1980)

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[23] Xu Q, Song T, Cui W, Liu Y, Xu W, Lee ST, Sun B, ACS Appl. Mater. Interfaces, 7, 3272 (2015)

[24] Bae JW, Koo BR, An HR, Ahn HJ, Ceram. Int., 41, 14668 (2015)