Nucleation and growth of nickel on n- and p-type Si(100) is investigated, using a plating bath composed of nickel sulphamate and boric acid. For n-type Si, the impact of applied potential and current density on nuclei density and deposit defectivity due to hydrogen gas bubble adsorption are studied. Cathodic current transients for p-type Si show a monotonous decay as a function of time, due to light 'shadowing' of the growing nuclei. A simple model is used to explain the observations. Additionally, the impact of the Si surface chemistry on the Ni deposition process is studied. On hydrogen-terminated Si, the nuclei have a hemispherical shape, while on anodically oxidized surfaces spherical nuclei are obtained. (C) 2017 Elsevier Ltd. All rights reserved.