화학공학소재연구정보센터
Inorganic Chemistry, Vol.56, No.7, 4084-4092, 2017
Germanium Compounds Containing Ge=E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials
New germanium chalcogenide precursors, S=Ge(dmamp)(2) (3), S=Ge(dmampS)(2) (4), Se=Ge(dmamp)(2) (5), Se=Ge(dmampS)(2) (6), Te=Ge(dmamp)(2) (7), and Te=Ge(dmampS)(2) (8), were synthesized from Ge(dmamp)(2) (1) and Ge(dmampS)(2) (2) using sulfur, selenium, and tellurium powders (dmamp = 1-dimethylamino-2-methyl-2-propanolate, dmampS = 1-dirnethylamino-2-methylpropane-2-thiolate). Complexes 1 and 2 were synthesized from metathesis reactions of GeCl2. dioxane with 2 equiv of aminoalkoxide or aminothiolate ligands. Thermogravimetric analysis of complex 1 displayed good thermal stability and volatility. The molecular structures of complexes 2-8 from X-ray single crystallography showed distorted trigonal bipyramidal geometry at the germanium centers. Germanium chalcogenide materials (GeSe and GeTe) were obtained from the thermal decomposition of complexes 5, 6, and 8 in hexadecane. X-ray diffraction patterns exhibited that GeSe and GeTe had orthorhombic and rhombohedral phases, respectively. This study affords a facile method to easily prepare germanium chalcogenide materials using well-designed and stable complexes by thermal decomposition of single-source precursors in solution.