A series of GaAs1-xSbx epilayers have been successfully grown on GaAs (100) substrates by liquid phase epitaxy (LPE) technique at about 550 degrees C. Samples with different antimony (Sb) contents have been analyzed by high-resolution X-ray diffraction (HRXRD) measurement, which confirms the incorporation of Sb in the epilayers. Room temperature optical properties of GaAs1-xSbx epilayers were performed by photo luminescence (PL) and transmission spectra. (C) 2017 Elsevier B.V. All rights reserved.