Growth of InGaAs/GaAs quantum dots (QDs) in inverted pyramids on pre-patterned {111}B GaAs substrates is a versatile technique allowing for precise site and emission energy control. We report on the fabrication of QDs with a wavelength setting within a range of 100 meV achieved in a single growth step by varying the pyramid size and without compromising the optical quality. Low-temperature micro-photoluminescence spectra of the QD ensembles exhibit low inhomogeneous broadening (similar to 15 meV) and excitonic linewidths as low as 50 eV. Moreover, we demonstrate the selective energy tuning of a single QD embedded within an ensemble of QDs spectrally blue-shifted by as much as 40 meV, which is of interest for single QD spectroscopy and the fabrication of integrated multi-wavelength single photon sources.