The CVD method was employed to synthesize nanoobjects of Cu-Si phases at temperature of about 500 degrees C. Cu/Cu5Si-substrates and various Si-containing precursors (SiH4, EtSiH3, BuSiH3) with/without added H-2 or air were used. Nanoobjects of various morphologies (nanoplatelets of eta'-Cu3Si, nanoribbons and nanorods of eta'-Cu3Si, and nanowires of gamma-Cu83Si17) were obtained depending on the experimental conditions, mainly type and pressure of precursor. A mixture of Si-containing precursor and H-2/air promotes the growth of nanoobjects compared to using the pure Si-containing precursor. With increasing pressure of precursors the morphology changes from 1D (nanowires) to 2D (nanoribbons, nanoplatelets). Nanoobjects grow via the non-catalytic VS mechanism. (C) 2017 Elsevier B.V. All rights reserved.