InGaN multi-quantum well (MQW) structures were grown by plasma-assisted molecular beam epitaxy (PAMBE) on semipolar (20 (2) over bar1), nonpolar m-plane (10 (1) over bar0) and polar c-plane (0001) GaN substrates. The impact of In- and N-rich growth conditions on surface morphology, luminescence properties and structural quality was studied. Semipolar MQWs grown under N-excess have a smooth surface and narrow photoluminescence (PL) at room temperature at 420 nm. Semipolar MQWs grown under In-rich conditions emitted at 414 nm with slightly broader emission and higher surface roughness. Nonpolar m-plane MQWs grown under N-excess emitted at 411 nm and its surface was very rough. When grown under In-rich conditions, nonpolar MQWs also emitted at 411 nm but significant peak broadening was observed due to hillock formation resulting in surface roughening and inhomogeneous In incorporation. The c-plane reference MQW structures grown in the same growth run did not show PL at room temperature due to poor structural quality related to three-dimensional growth mode and structure relaxation. (C) 2017 Elsevier B.V. All rights reserved.