WS2 flakes have been grown successfully on SiO2(300 nm)/Si substrate via traditional low-pressure chemical vapor deposition method. We studied the controllable growth of WS2 flakes on three of the growth parameters: the time of S-precursor introduction, the temperature of WO3 precursor and the growth temperature. The as-prepared products were characterized by X-ray photoemission spectroscopy, Raman spectra and atomic force microscopy. It is found that the morphologies of WS2 flakes and the products are highly dependent on the concentration of S-precursor, W-precursor and the ratio of W atoms to S atoms, while large-area WS2 flakes up to 160 mu m can be obtained. If the ratio of W/S is ae1:2, we obtain triangular and hexagonal WS2 flakes. On the contrary, if the ratio of W/S is > 1:2, besides WS2 flakes, W nanowires will be formed owing to the superfluous W atoms. This study can provide an important and practical guide to preparing large-area and high-quality two-dimensional transition metal dichalcogenides materials.