For high-power white LED applications, YAG:Ce-based yellow phosphors were embedded in a low-T-g Bi2O3-B2O5-ZnO-Sb2O5 glass (BiG) by sintering route. A high-T-g silicate glass (SiG) was also used for comparison. Dense (porosity<2%) phosphor-glass composites were obtained after sintered at 800 degrees C (for SiG) and 325 degrees C (for BiG). XRD quantitative analysis indicates that the loss of phosphor content is in the range of 2.5%-22%, caused by partial dissolution of phosphor particles into the glass matrix during sintering. The element distribution across the interface and within the reaction zone between phosphor and glass was analyzed by TEM/SEM-EDS. The intrinsic emission characteristic of YAG:Ce is nearly not altered, possibly resulted from the slight modification of the YAG phase during sintering. Thus the final emission intensity of the sintered body is mainly determined by the residual amount of the YAG:Ce phase. Replace the high-T-g SiG glass by the low-T-g BiG glass, prenitridize the YAG:Ce phosphor, and change the sintering atmosphere from air to N-2 suppress the loss of phosphor during sintering. Therefore, the resulting loss of emission intensity of the phosphor-embedded glass material can be reduced to only about 1.8%.