Solution-processed colloidal quantum dots (CQDs) are promising candidates for large-scale, low-cost, and lightweight photovoltaic and electronic devices. Carrier transport dynamics has a substantial impact on device efficiency optimization. Coupled with photocarrier radiometry (PCR) - a dynamic spectrally integrated frequency-domain photoluminescence (PL) modality, we report the derivation of a trap-state-mediated carrier hopping transport model for the extraction of multiple carrier transport parameters in PbS CQD thin films. These parameters, including effective carrier lifetime rE, hopping diffusivity D-h, trap-state-dependent carrier trapping rate R-T, diffusion length L-h, and carrier thermal emission rate ei, were obtained for CQD thin films with different dot size and capping ligands: tetrabutylammonium iodide (TBAI), 1,2-ethanedithiol (EDT), and methylammonium lead triiodide perovskite (MAPbI(3)). Consistent with the framework of phonon-assisted carrier hopping mechanism, T-E, D-h, and L-h have demonstrated a monotonic dependence on temperature in the range from 100 K to 300 K. Perovskite-passivated PbS CQD thin films, especially those with larger dot sizes which are free of apparent defect induced PL emission and have higher T-E and D-h at room temperature (ca. 0.51 mu is and 1.80x10(-2) cm(2)/s, respectively) than their counterparts, demonstrate better photovoltaic material properties. Dot-size-dependent exciton binding energies (35.21-53.20 meV) were characterized using a dynamic PCR photo-thermal spectroscopy that also characterized the trap-state-mediated carrier hopping activation energies in the range from 100 meV to 280 meV. To test the reliability of the best-fitted results, computational fitting uniqueness was examined using a parametric theory.