The aim of the present study is to evaluate the possibility of improving crystalline quality of AIN deposited on Si (111) substrates by implementation of substrate patterning. Growth on flat Si (111) substrates was conducted to investigate influence of deposition parameters on the growth behavior and quality of resulting AIN films. This investigation showed that SiC buffer layer is required to suppress disorientation of the AIN layer, optimum growth temperature is about 1260 degrees C, Al-rich conditions favor more rapid coalescence of the nucleation island while N-rich conditions lead to the formation of a smooth surface. Transposition of the resulting AIN growth recipe on to patterned Si (111) substrates revealed reduction of the stress in AIN, bending of the threading dislocations and formation of a dislocation free area in the overgrown region. For the formation of a continuous layer on silicon pillars, we propose a novel technique based on the decrease of the mean free path of gaseous species leading to localized growth of AIN on the top of the pillars. Such continuous layer exhibit lower crack density compared to that on a flat substrate. Thus, the growth of AIN on pillar patterned Si substrate is seen to be a promising way for the further improvement of the AIN films quality. (C )2016 Elsevier B.V. All rights reserved.