Sol-gel processed ZrO2 was used as the main active channel material for a resistive switching memory device implemented on Indium Tin oxide coated glass substrates. The memory properties of the deposited ZrO2 layers depended on the top electrode material. Inert Au top electrodes did not yield resistive switching memory properties, while Ag top electrodes provided conventional resistive switching memory properties, with sharp on and off switching operation. In contrast, Ti top electrodes provided smooth on and off switching operation, and modifying the pulse widths and voltages allowed good control over the resistivity. The fabricated Au/Ti/ZrO2/ITO systems exhibited four different resistance levels, and good multi level storage characteristics were observed for at least 104 cycles without degradation. (C) 2017 Elsevier B.V. All rights reserved.